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| Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C) Ratings 800 900 800 900 500 8 15 7 4 45 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC5077 2SC5077A 2SC5077 Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage 2SC5077A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature V V V A A A W C C 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC5077 2SC5077A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = -1.6A, VCC = 200V 500 15 8 1.0 1.5 1.0 1.0 3.0 0.3 V V MHz s s s min typ max 100 100 100 Unit A A A V 1 Power Transistors PC -- Ta 60 12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 10 2SC5077, 2SC5077A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (W) 50 (1) 40 Collector current IC (A) 8 IB=1200mA 6 1000mA 800mA 600mA 400mA 300mA 200mA 2 100mA 30 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4) 4 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=5 1000 VCE=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 100 300 10 100 100 3 30 30 1 25C 0.3 TC=-25C 100C 10 TC=-25C 3 25C 100C 10 3 0.1 0.1 0.3 1 3 10 30 100 1 0.1 0.3 1 3 10 30 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg 1 0.3 0.1 0.03 ton tf Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 Collector current IC (A) 10 3 10 3 IC t=0.5ms 1ms 10ms DC 100 30 1 0.3 0.1 0.03 0.01 10 3 1 1 3 10 30 100 0.01 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 IC Lcoil=30H IC/IB=5 (IB1=-IB2) TC100C 2SC5077, 2SC5077A Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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